Open AccessImprovement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation
Author(s) -
Jun-Gyu Kim,
Dae-Hyun Kim
Publication year - 2020
Publication title -
senseo haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2093-7563
pISSN - 1225-5475
DOI - 10.46670/jsst.2020.29.4.266
Subject(s) - passivation , materials science , metal , field effect transistor , semiconductor , optoelectronics , sulfur , oxide , transistor , nanotechnology , metallurgy , electrical engineering , layer (electronics) , voltage , engineering