Open AccessAn Analysis of Aluminium Oxide and Silicon Dioxide as a Dielectric on Nano Structured Bottom Gate Bottom Contact Organic Thin Film Transistor Based Sensor
Author(s) -
Rajpoot Subhadra
Publication year - 2020
Publication title -
international journal of modern trends in science and technology
Language(s) - English
Resource type - Journals
ISSN - 2455-3778
DOI - 10.46501/ijmtst060807
Subject(s) - silicon dioxide , materials science , silicon , transistor , gate dielectric , optoelectronics , gate oxide , thin film transistor , dielectric , current (fluid) , electrode , nanotechnology , electrical engineering , composite material , chemistry , layer (electronics) , voltage , engineering
A Nano-structuredflexible bottom gate bottom contact (BGBC) organic thin film transistor basedpentacenesensor was utilisedto compare between the two frequently used dielectric materiali.ealuminiumoxide (Al2O3) and silicon dioxide (SiO2). The organic sensor served as an excellent gassensor which was visualised through the simulation result in the form of variation between itsmax. andmin. drain current and Ion /Ioffratio. The Ion / Ioffratio in the case ofaluminiumoxidewas found to begreater as compared to silicon dioxide whereas the minimum drain current was greater in the case ofsilicon dioxide and vice versa for the maximum drain current. On comparing the sensitivity of the device,which is the ratio of difference between min. drain current in the presence of any toxic gas and min. draincurrent in the absence of air to the min. drain current in the absence of air with respect tothe twodifferentelectrodes wasfound to be 0.0314 for aluminiumoxide and 0.02964 for silicon dioxide. Hence,aluminiumoxide taking upper hand in sensitivity