Open AccessInfluence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application
Author(s) -
Imosobomeh L. Ikhioya,
Eli Danladi,
Okoli Donald Nnanyere,
Abdulazeez O Salawu
Publication year - 2022
Publication title -
journal of the nigerian society of physical sciences
Language(s) - English
Resource type - Journals
ISSN - 2714-4704
DOI - 10.46481/jnsps.2022.502
Subject(s) - materials science , scanning electron microscope , absorbance , band gap , analytical chemistry (journal) , thin film , chemical bath deposition , grain size , nanocrystalline material , lattice constant , doping , transmittance , diffraction , optics , optoelectronics , composite material , chemistry , nanotechnology , physics , chromatography
In this study, Bismuth (Bi) doped ZnSe thin films were deposited on conducting glass substrates by electrochemical deposition technique and the influence of precursor temperature (room, 50, 55, 60 oC) on their optical and structural properties were systematically studied using the combined effect of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. The XRD patterns show a face-centred cubic structure indexed with peaks at (220), (221) and (300). The grain size was in the range of 3.24056 to 4.60481 nm with a lattice constant of 7.189Å. The material deposited at room, 500C, 550C, and 600C reveals agglomeration of particle on the surface of the substrate indicating uniform deposition. The optical spectra show that at different temperature (say room, 50oC, 55oC and 60oC), the absorbance and reflectance of BiZnSe thin films decreases with increase in wavelength of the incident radiation while the transmittance shows direct proportionality with the increase in wavelength. The bandgap demonstrated an increase in the range 1.75-2.25 eV with increase in temperature.