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Theoretical Study of a Bifacial Silicon Solar Cell Front Side Illuminated: Magnetic Field Effect on the Recombination Velocities Inducing the Short Circuit and Limiting the Open Circuit
Author(s) -
Armel Duvalier Péné,
Fabé Idrissa Barro,
M. Kamta,
Laurent Bitjoka,
G. E. Nkeng,
C. Kapseu
Publication year - 2021
Publication title -
international journal emerging technology and advanced engineering
Language(s) - English
Resource type - Journals
ISSN - 2250-2459
DOI - 10.46338/ijetae0221_02
Subject(s) - photocurrent , recombination , open circuit voltage , solar cell , short circuit , limiting , current density , optoelectronics , physics , condensed matter physics , materials science , chemistry , voltage , quantum mechanics , engineering , mechanical engineering , biochemistry , gene
The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity equation, the density of minority charge carriers in the base, the photocurrent density, and the phototension are determined. The study of the photocurrent density and the phototension, as a function of the junction recombination velocity, makes it possible to determine the recombination velocities at the junction initiating the short-circuit and limiting the open circuit respectively. From the profile of the variation of the photocurrent density and of the phototension as a function of the junction recombination velocity, a technique for determining the junction recombination velocities initiating the short circuit situation and limiting the open circuit is presented.