Open AccessAnalytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs
Author(s) -
Billel Smaani,
Samir Labiod,
Fares Nafa,
Mohamed Salah Benlatreche,
Saïda Latreche
Publication year - 2021
Publication title -
international journal of circuits, systems and signal processing
Language(s) - English
Resource type - Journals
ISSN - 1998-4464
DOI - 10.46300/9106.2021.15.149
Subject(s) - mosfet , poisson's equation , poisson distribution , current (fluid) , surface (topology) , channel (broadcasting) , computational physics , materials science , optoelectronics , physics , computer science , transistor , mathematics , telecommunications , quantum mechanics , thermodynamics , voltage , geometry , statistics
In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model