Open AccessModel for 1/f Noise in Graphene and in More Common Semiconductors
Publication year - 2020
Publication title -
international journal of circuits, systems and signal processing
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.156
H-Index - 13
ISSN - 1998-4464
DOI - 10.46300/9106.2020.14.22
Subject(s) - flicker noise , graphene , noise (video) , semiconductor , condensed matter physics , electron , mass action law , flicker , charge carrier , physics , charge (physics) , neutrality , materials science , computational physics , statistical physics , optoelectronics , nanotechnology , quantum mechanics , law , electrical engineering , noise figure , computer science , amplifier , engineering , cmos , artificial intelligence , image (mathematics) , political science
Measurements performed on several graphene samples have shown the presence of a minimum of the flicker noise power spectral density near the charge neutrality point. This behavior is anomalous with respect to what is observed in more usual semiconductors. Here, we report our explanation for this difference. We simulate the 1/f noise behavior of devices made of graphene and of more common semiconductors, through a model based on the validity of the mass-action law and on the conservation of the charge neutrality. We conclude that the minimum of the flicker noise at the charge neutrality point can be observed only in very clean samples of materials with similar mobilities for electrons and holes.