Open AccessANALYSIS THE EFFECTS OF FERROELECTRIC ELECTRIC FIELD ON CURRENT-VOLTAGE CHARACTERISTICS OF THE FERROELECTRIC FIELD EFFECT TRANSISTOR USING SRBI2TA2O9 THIN FILM
Author(s) -
An Nguyen Van,
An Vo Xuan,
Hong Tham Le Thi
Publication year - 2020
Publication title -
khoa học và công nghệ
Language(s) - English
Resource type - Journals
ISSN - 2525-2267
DOI - 10.46242/jst-iuh.v28i04.231
Subject(s) - ferroelectricity , materials science , optoelectronics , polarization (electrochemistry) , electric field , field effect transistor , voltage , transistor , hysteresis , non volatile memory , doping , electronic engineering , condensed matter physics , electrical engineering , chemistry , dielectric , engineering , physics , quantum mechanics
This paper presents a new analytical expression for current-voltage characteristics of the Ferroelectric Field Effect Transistor (FeFET), a promising candidate for nonvolatile memories. For this research, a FeFET model using Pt/SrBi2Ta2O9/Insulators/Si thin film as an effect gate stack was proposed and assessed. Firstly, we have studied the effects of ferroelectric polarization on current-voltage characteristics of FeFET based on the analytical method of CMOS device, the polarization hysteresis properties versus electric field (P-E) of the ferroelectric material was explicitly analysed with two parameters of saturated and unsaturated polarization. Then, by mathematical analysis, the current-voltage values was calculated under different conditions such as using differences of substrate doping concentration, oxide thickness, ferroelectric thickness, working temperature, etc. Finally, the calculated results were simulated by the Matlab software that gave us an overview of the device properties.