Open AccessNew ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Author(s) -
Radu Gabriel Bozomitu,
Vlad Cehan
Publication year - 2013
Publication title -
advances in electrical and computer engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 23
eISSN - 1844-7600
pISSN - 1582-7445
DOI - 10.4316/aece.2013.04017
Subject(s) - cmos , transistor , inversion (geology) , computer science , electrical engineering , electronic engineering , engineering , voltage , geology , paleontology , structural basin
In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors. New operational transconductance amplifiers in CMOS technology, providing elementary tanh and sinh/cosh functions with high accuracy are proposed. These elementary cells are used to design first order CMOS ELIN filters. For a bias current of 1A, the dynamic range of the predistorted input voltage is 220mVpp and the current consumption is about 20uA from a 3.3V supply voltage. The simulations performed in 0.18um CMOS technology confirm the theoretically obtained results