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Structure for Improving Short-Circuit Capability and the Method for Protecting the IGBT Devices
Author(s) -
A. Hallouche,
Amar Tilmatine
Publication year - 2008
Publication title -
advances in electrical and computer engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 23
eISSN - 1844-7600
pISSN - 1582-7445
DOI - 10.4316/aece.2008.02002
Subject(s) - insulated gate bipolar transistor , computer science , short circuit , reliability engineering , electronic engineering , electrical engineering , engineering , voltage
A short-circuit is a serious situation in a circuit. That is why the determination of the fault current during the operation of the IGBT requires suitable gestures in order to realise a better and reliable operation for the power converters. Thus, it is necessary to know the extreme operating limits for these devices since the use of the IGBT in power converters often subjects them to certain significant electric constraints such as, the short-circuit and the turn OFF on the inductive load. This paper presents then a means of protection for a safe and precise shutdown of the fault current in the device. This circuit allows the IGBT to operate without risks, and permits a reduction of the conduction losses in the device without compromising the characteristics of protection of the short-circuit

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