Open AccessMinority carrier lifetime in monocrystalline, polycrystalline and amorphous silicon solar cells using photo-induced open-circuit voltage decay (ocvd) technique
Author(s) -
Ulrich Stutenbäumer
Publication year - 1999
Publication title -
sinet. an ethiopian journal of science/sinet
Language(s) - English
Resource type - Journals
eISSN - 2520-7997
pISSN - 0379-2897
DOI - 10.4314/sinet.v22i1.18131
Subject(s) - monocrystalline silicon , materials science , open circuit voltage , optoelectronics , carrier lifetime , amorphous silicon , amorphous solid , crystallite , silicon , polycrystalline silicon , voltage , crystalline silicon , nanotechnology , chemistry , electrical engineering , crystallography , metallurgy , thin film transistor , engineering , layer (electronics)