Open AccessInvestigation of InGaN/Si double junction tandem solar cells
Author(s) -
F. Bouzid,
L. Hamlaoui
Publication year - 2015
Publication title -
revue des sciences fondamentales et appliquées
Language(s) - English
Resource type - Journals
ISSN - 1112-9867
DOI - 10.4314/jfas.v4i2.1
Subject(s) - tandem , energy conversion efficiency , materials science , optoelectronics , recombination , solar cell , photovoltaic system , work (physics) , solar cell efficiency , front (military) , voltage , theory of solar cells , physics , chemistry , composite material , electrical engineering , thermodynamics , meteorology , biochemistry , quantum mechanics , gene , engineering
In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results show that a front recombination velocity value of 1e3cm/s is most advantageous and the use of relatively thick bottom cell is necessary to obtain conversion efficiency greater than 27%, at 300°k cell temperature. This efficiency will decrease as the operating temperature increase.