Photoluminescence properties of the red phosphor YInGe₂O₇:Eu³⁺

Eu³⁺-doped YInGe₂O₇ phosphors were prepared via a solid-state reaction with metal oxides and their excitation and emission spectra were measured at room temperature. The results showed that pure-phase YInGe₂O₇ could be obtained after firing at 1250 °C. The maximum photoluminescence intensity of YInGe₂O₇:Eu³⁺ phosphor was achieved when doped with 40 mol% Eu³⁺ ions. Compared with Y₂O₂S:0.05Eu³⁺, the Y_0.60InGe₂O₇:Eu³⁺_0.40 phosphor obtained showed intense red-emission lines at 616 nm, corresponding to forced electric dipole ⁵D₀ → ⁷F₂ transitions of Eu³⁺ under 394 nm light excitation. The International Commission on Illumination chromaticity coordinates of the phosphors (x = 0.644, y = 0.356) of Y_0.60InGe₂O₇:Eu³⁺_0.40 were close to National Television Standard Committee standard values. As such, the synthesized phosphors may find applications in near ultraviolet InGaN chip-based white light-emitting diodes