Open AccessPhotoluminescence properties of the red phosphor YInGe<sub>2</sub>O<sub>7</sub>:Eu<sup>3+</sup>
Author(s) -
Jeong In Han,
Liqiang Zhou,
Qi Pang,
Ha-Young Yang
Publication year - 2013
Publication title -
bulletin of the chemical society of ethiopia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.288
H-Index - 25
eISSN - 1726-801X
pISSN - 1011-3924
DOI - 10.4314/bcse.v27i2.18
Subject(s) - phosphor , chromaticity , photoluminescence , chemistry , analytical chemistry (journal) , luminescence , doping , electric dipole transition , ion , light emitting diode , optoelectronics , dipole , optics , materials science , physics , magnetic dipole , organic chemistry , chromatography
Eu3+-doped YInGe2O7 phosphors were prepared via a solid-state reaction with metal oxides and their excitation and emission spectra were measured at room temperature. The results showed that pure-phase YInGe2O7 could be obtained after firing at 1250 °C. The maximum photoluminescence intensity of YInGe2O7:Eu3+ phosphor was achieved when doped with 40 mol% Eu3+ ions. Compared with Y2O2S:0.05Eu3+, the Y0.60InGe2O7:Eu3+0.40 phosphor obtained showed intense red-emission lines at 616 nm, corresponding to forced electric dipole 5D0 → 7F2 transitions of Eu3+ under 394 nm light excitation. The International Commission on Illumination chromaticity coordinates of the phosphors (x = 0.644, y = 0.356) of Y0.60InGe2O7:Eu3+0.40 were close to National Television Standard Committee standard values. As such, the synthesized phosphors may find applications in near ultraviolet InGaN chip-based white light-emitting diodes