Open AccessChemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma
Author(s) -
JongChang Woo,
Chang-Il Kim
Publication year - 2017
Publication title -
transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2017.18.2.74
Subject(s) - x ray photoelectron spectroscopy , materials science , analytical chemistry (journal) , etching (microfabrication) , thin film , plasma , oxide , ion , plasma etching , layer (electronics) , nanotechnology , chemistry , chemical engineering , metallurgy , chromatography , physics , organic chemistry , quantum mechanics , engineering
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