Open AccessTemperature Dependence of Electrical Parameters of Silicon-on-Insulator Triple Gate n-Channel Fin Field Effect Transistor
Author(s) -
Nour El I. Boukortt,
Baghdad Hadri,
Alina Caddemi,
Giovanni Crupi,
Salvatore Patanè
Publication year - 2016
Publication title -
transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2016.17.6.329
Subject(s) - transconductance , materials science , silicon on insulator , transistor , negative bias temperature instability , drain induced barrier lowering , threshold voltage , optoelectronics , field effect transistor , fin , silicon , subthreshold conduction , voltage , electrical engineering , composite material , engineering
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