Open AccessControl of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile
Author(s) -
Morteza Charmi
Publication year - 2016
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2016.17.5.270
Subject(s) - doping , mosfet , drain induced barrier lowering , materials science , gaussian , channel length modulation , poisson's equation , schrödinger equation , short channel effect , channel (broadcasting) , condensed matter physics , physics , transistor , optoelectronics , quantum mechanics , field effect transistor , telecommunications , computer science , voltage