Open AccessElectrochemical Properties of a Si3N4Dielectric Layer Deposited on Anodic Aluminum Oxide for Chemical Sensors
Author(s) -
Ye-Won Jo,
Sung–Gap Lee,
Jin-Ho Yeo,
Dong Hoon Lee
Publication year - 2016
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2016.17.3.159
Subject(s) - materials science , anodizing , chemical vapor deposition , aluminium oxide , plasma enhanced chemical vapor deposition , layer (electronics) , dielectric , oxide , analytical chemistry (journal) , aluminium , oxalic acid , electrochemistry , electrolyte , aluminium oxides , chemical engineering , inorganic chemistry , nanotechnology , optoelectronics , electrode , metallurgy , chemistry , chromatography , engineering , biochemistry , catalysis