Open AccessReverse-bias Leakage Current Mechanisms in Cu/n-type Schottky Junction Using Oxygen Plasma Treatment
Author(s) -
Hogyoung Kim
Publication year - 2016
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2016.17.2.113
Subject(s) - materials science , thermionic emission , x ray photoelectron spectroscopy , reverse leakage current , schottky diode , plasma , schottky barrier , oxygen , analytical chemistry (journal) , biasing , optoelectronics , voltage , nuclear magnetic resonance , electrical engineering , electron , diode , chemistry , physics , organic chemistry , quantum mechanics , chromatography , engineering