Open AccessLow-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions
Author(s) -
Hongyu An,
Jooyeon Kim
Publication year - 2015
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2015.16.4.187
Subject(s) - materials science , optoelectronics , thin film transistor , annealing (glass) , schottky barrier , schottky diode , transistor , threshold voltage , diode , analytical chemistry (journal) , electrical engineering , voltage , nanotechnology , layer (electronics) , chromatography , composite material , engineering , chemistry