
Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor
Author(s) -
고경민,
Sang Yeol Lee
Publication year - 2014
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2014.15.6.328
Subject(s) - materials science , thin film transistor , sputtering , optoelectronics , amorphous solid , sputter deposition , threshold voltage , doping , transistor , layer (electronics) , thin film , nanotechnology , voltage , electrical engineering , crystallography , engineering , chemistry