Open AccessA Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates
Author(s) -
Jinseob Kim,
YuMi Kim,
KwangSeok Jeong,
HoJin Yun,
SeungDong Yang,
SeongHyeon Kim,
Jin-Un An,
Young-Uk Ko,
GaWon Lee
Publication year - 2014
Publication title -
transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2014.15.6.315
Subject(s) - materials science , oxygen , threshold voltage , thin film transistor , instability , ionization , electron , limiting oxygen concentration , transistor , atomic physics , optoelectronics , voltage , nanotechnology , ion , electrical engineering , physics , quantum mechanics , mechanics , engineering , layer (electronics)
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