Open AccessEffect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells
Author(s) -
Jinjoo Park,
Young-Kuk Kim,
Sunwha Lee,
Younjung Lee,
Junsin Yi,
Shahzada Qamar Hussain,
Nagarajan Balaji
Publication year - 2012
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2012.13.4.192
Subject(s) - diborane , materials science , plasma enhanced chemical vapor deposition , silane , analytical chemistry (journal) , band gap , amorphous solid , amorphous silicon , hydrogen , silicon , oxide , solar cell , chemical vapor deposition , thin film , conductivity , nanotechnology , crystalline silicon , optoelectronics , boron , composite material , crystallography , chemistry , organic chemistry , metallurgy , chromatography
We reported diborane (B2H6) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) filmsprepared by using silane (SiH4) hydrogen (H2) and nitrous oxide (N2O) in a radio frequency (RF) plasma enhancedchemical vapor deposition (PECVD) system. We improved the Eopt and conductivity of p-type a-SiOx:H films withvarious N2O and B2H6 ratios and applied those films in regards to the a-Si thin film solar cells. For the single layerp-type a-SiOx:H films, we achieved an optical band gap energy (Eopt) of 1.91 and 1.99 eV, electrical conductivity ofapproximately 10-7 S/cm and activation energy (Ea) of 0.57 to 0.52 eV with various N2O and B2H6 ratios. We appliedthose films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: Voc = 853 and842 mV, Jsc = 13.87 and 15.13 mA/cm2. FF = 0.645 and 0.656 and η = 7.54 and 8.36% with B2H6 ratios of 0.5 and 1%respectively