Open AccessRandom-Oriented (Bi,La)4Ti3O12Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device
Author(s) -
Youn-Ki Lee,
Sung-Lim Ryu,
Soon-Yong Kweon,
Seung-Jin Yeom,
Hee-Bok Kang
Publication year - 2011
Publication title -
transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2011.12.6.258
Subject(s) - ferroelectric ram , materials science , ferroelectricity , sputtering , random access memory , thin film , electrode , optoelectronics , transistor , stack (abstract data type) , layer (electronics) , dielectric , nanotechnology , voltage , electrical engineering , computer science , computer hardware , chemistry , engineering , programming language
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