Electrical Properties of Boron and Phosphorus Doped μc-Si:H Films using Inductively Coupled Plasma Chemical Vapor Deposition Method for Solar Cell Applications | Zendy

Chaehwan Jeong | Zendy; Minsung Jeon | Zendy; Kōichi Kamisako | Zendy

Open Access

Electrical Properties of Boron and Phosphorus Doped μc-Si:H Films using Inductively Coupled Plasma Chemical Vapor Deposition Method for Solar Cell Applications

Author(s) -

Chaehwan Jeong,

Minsung Jeon,

Kōichi Kamisako

Publication year - 2008

Publication title -

transactions on electrical and electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.201

H-Index - 18

eISSN - 2092-7592

pISSN - 1229-7607

DOI - 10.4313/teem.2008.9.1.028

Subject(s) - materials science , chemical vapor deposition , solar cell , silane , analytical chemistry (journal) , microcrystalline , inductively coupled plasma , amorphous solid , plasma enhanced chemical vapor deposition , doping , boron , electrical resistivity and conductivity , band gap , silicon , plasma , nanotechnology , crystallography , optoelectronics , composite material , engineering , chromatography , electrical engineering , chemistry , physics , organic chemistry , quantum mechanics

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