Open AccessElectrical Properties of Boron and Phosphorus Doped μc-Si:H Films using Inductively Coupled Plasma Chemical Vapor Deposition Method for Solar Cell Applications
Author(s) -
Chaehwan Jeong,
Minsung Jeon,
K. Kamisako
Publication year - 2008
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2008.9.1.028
Subject(s) - materials science , chemical vapor deposition , solar cell , silane , analytical chemistry (journal) , microcrystalline , inductively coupled plasma , amorphous solid , plasma enhanced chemical vapor deposition , doping , boron , electrical resistivity and conductivity , band gap , silicon , plasma , nanotechnology , crystallography , optoelectronics , composite material , engineering , chromatography , electrical engineering , chemistry , physics , organic chemistry , quantum mechanics