Open AccessInfluence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films
Author(s) -
Dong-Whan Choi,
Jong In Choi,
Hwan Jin Park,
J.H. Chae,
Daeil Kim
Publication year - 2008
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2008.9.1.012
Subject(s) - materials science , hafnium , argon , analytical chemistry (journal) , auger electron spectroscopy , sputtering , nitrogen , x ray reflectivity , silicon oxynitride , crystallization , thin film , silicon , zirconium , chemical engineering , metallurgy , nanotechnology , silicon nitride , atomic physics , chromatography , quantum mechanics , nuclear physics , engineering , chemistry , physics