Open AccessA Study on the Electrical Characteristics of Ultra Thin Gate Oxide
Author(s) -
Gum-Yong Eom
Publication year - 2004
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2004.5.5.169
Subject(s) - shallow trench isolation , materials science , gate oxide , locos , oxide , time dependent gate oxide breakdown , metal gate , optoelectronics , annealing (glass) , threshold voltage , equivalent oxide thickness , electrical engineering , silicon , voltage , trench , nanotechnology , layer (electronics) , composite material , metallurgy , transistor , silicon nitride , engineering