Open AccessA Layout-Based CMOS RF Model for RFIC's
Author(s) -
Park Kwang Min
Publication year - 2003
Publication title -
transactions on electrical and electronic materials/transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2003.4.3.005
Subject(s) - rfic , cmos , materials science , skin effect , capacitance , inductance , radio frequency , equivalent circuit , representation (politics) , metal gate , proximity effect (electron beam lithography) , electronic engineering , transistor , electrical engineering , optoelectronics , engineering , physics , voltage , gate oxide , nanotechnology , electrode , quantum mechanics , layer (electronics) , politics , political science , law , resist , electron beam lithography