Open AccessThe Optimal Design of High Voltage Non Punch Through IGBT and Field Stop IGBT
Author(s) -
Ey Goo Kang
Publication year - 2017
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2017.30.4.214
Subject(s) - insulated gate bipolar transistor , voltage drop , electrical engineering , power semiconductor device , voltage , breakdown voltage , materials science , high voltage , junction temperature , power (physics) , engineering , electronic engineering , physics , quantum mechanics