Open AccessCharacteristics of Sputtering Mo Doped Carbon Films and the Application as the Gate Electrode in Organic Thin Film Transistor
Author(s) -
Young Gon Kim,
Yong Seob Park
Publication year - 2017
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2017.30.1.23
Subject(s) - materials science , thin film transistor , thin film , electrode , surface roughness , sputtering , sputter deposition , electrical resistivity and conductivity , doping , optoelectronics , transistor , power density , current density , threshold voltage , analytical chemistry (journal) , composite material , voltage , electrical engineering , nanotechnology , layer (electronics) , power (physics) , chemistry , physics , engineering , quantum mechanics , chromatography
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