Open AccessDecrease of Interface Trap Density of Deposited Tunneling Layer Using CO2Gas and Characteristics of Non-volatile Memory for Low Power Consumption
Author(s) -
Sojin Lee,
Kyungsoo Jang,
Cam Phu Thi Nguyen,
Taeyong Kim,
Junsin Yi
Publication year - 2016
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2016.29.7.394
Subject(s) - analytical chemistry (journal) , materials science , non volatile memory , chemical vapor deposition , quantum tunnelling , oxide , silane , silicon , chemistry , nanotechnology , optoelectronics , composite material , metallurgy , chromatography
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