Open AccessImproving the Reliability by Straight Channel of As2Se3-based Resistive Random Access Memory
Author(s) -
Ki-Hyun Nam,
Chung-Hyeok Kim
Publication year - 2016
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2016.29.6.327
Subject(s) - resistive random access memory , materials science , amorphous solid , chalcogenide , optoelectronics , thin film , lithography , nanotechnology , voltage , electrical engineering , chemistry , organic chemistry , engineering
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