Open AccessAnalysis of The Electrical Characteristics of Power IGBT According to Design and Process Parameter
Author(s) -
Ey Goo Kang
Publication year - 2016
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2016.29.5.263
Subject(s) - insulated gate bipolar transistor , voltage drop , breakdown voltage , electrical engineering , planar , trench , materials science , voltage , power semiconductor device , power (physics) , optoelectronics , electronic engineering , engineering , computer science , composite material , physics , computer graphics (images) , layer (electronics) , quantum mechanics
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