Open AccessAnalysis of The Electrical Characteristics of Power MOSFET with Floating Island
Author(s) -
Ey Goo Kang
Publication year - 2016
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2016.29.4.199
Subject(s) - mosfet , power mosfet , planar , breakdown voltage , doping , electrical engineering , materials science , power semiconductor device , voltage , optoelectronics , engineering , transistor , computer science , computer graphics (images)
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