Open AccessIon Gel Gate Dielectrics for Polymer Non-volatile Transistor Memories
Author(s) -
Boeun Cho,
Moon Sung Kang
Publication year - 2016
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2016.29.12.759
Subject(s) - materials science , transistor , optoelectronics , polymer , thin film transistor , ion , non volatile memory , electrolyte , dielectric , active layer , signal (programming language) , ionic bonding , electrode , nanotechnology , layer (electronics) , electrical engineering , voltage , computer science , composite material , chemistry , organic chemistry , programming language , engineering
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