Open AccessThe Develop of Super Junction IGBT for Using Super High Voltage
Author(s) -
Hun-Suk Chung,
Ey Goo Kang
Publication year - 2015
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2015.28.8.496
Subject(s) - insulated gate bipolar transistor , voltage drop , junction temperature , breakdown voltage , electrical engineering , voltage , materials science , thermal resistance , high voltage , pillar , power (physics) , power semiconductor device , optoelectronics , thermal , engineering , mechanical engineering , physics , quantum mechanics , meteorology
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