Open AccessThe Optimal Design of High Voltage Field Stop IGBT
Author(s) -
Byoung-Sup Ahn,
Lanxiang Zhang,
Yong Liu,
Ey Goo Kang
Publication year - 2015
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2015.28.8.486
Subject(s) - insulated gate bipolar transistor , planar , power semiconductor device , electrical engineering , materials science , power (physics) , gate driver , voltage , transistor , high voltage , semiconductor , current injection technique , optoelectronics , bipolar junction transistor , engineering , computer science , physics , computer graphics (images) , quantum mechanics
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