Study on the Thin-film Transistors Based on TiO2 Active-channel Using Atomic Layer Deposition Technique
Author(s) -
SungJin Kim
Publication year - 2015
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2015.28.7.415
Subject(s) - atomic layer deposition , materials science , thin film transistor , transistor , annealing (glass) , layer (electronics) , optoelectronics , rutile , deposition (geology) , thin film , threshold voltage , voltage , electronic engineering , nanotechnology , electrical engineering , composite material , chemical engineering , paleontology , engineering , sediment , biology
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