Open AccessA Comparison of Methods to Remove the Boron Rich Layer Formed at Boron Doping Process for c-Si Solar Cell Applications
Author(s) -
Ju Yeon Choi,
Young Joon Cho,
Hyo Sik Chang
Publication year - 2015
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2015.28.10.665
Subject(s) - boron , passivation , materials science , common emitter , doping , solar cell , carrier lifetime , etching (microfabrication) , analytical chemistry (journal) , layer (electronics) , in situ , oxygen , open circuit voltage , chemical engineering , silicon , voltage , nanotechnology , chemistry , optoelectronics , electrical engineering , chromatography , organic chemistry , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom