Open AccessEffect of SiO2Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor
Author(s) -
Se-Won Lee,
Yeong-Hyeon Hwang,
Won-Ju Cho
Publication year - 2012
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2012.25.1.24
Subject(s) - materials science , optoelectronics , amorphous solid , threshold voltage , subthreshold slope , buffer (optical fiber) , thin film transistor , layer (electronics) , transistor , subthreshold conduction , mosfet , gate dielectric , dielectric , stress (linguistics) , electrical engineering , voltage , composite material , chemistry , engineering , linguistics , philosophy , organic chemistry
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