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Optimal Design of GaN Power MOSFET Using Al2O3Gate Oxide
Author(s) -
Tae-Jin Nam,
Henry Shu-Hung Chung,
Ey Goo Kang
Publication year - 2011
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2011.24.9.713
Subject(s) - mosfet , materials science , fabrication , power mosfet , threshold voltage , optoelectronics , voltage , gate oxide , power (physics) , breakdown voltage , electronic engineering , electrical engineering , engineering , transistor , physics , medicine , alternative medicine , pathology , quantum mechanics

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