Open AccessCharacteristics of HfO2Thin Films Using Wet Etching
Author(s) -
Jeung-Ryoul Yang,
Noh-Seok Kwak,
Jung-Hun Lim,
Yong-Jae Choi,
TaekSung Hwang
Publication year - 2011
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2011.24.9.687
Subject(s) - materials science , oxide , etching (microfabrication) , thermal stability , hafnium , thermal , hydrazine (antidepressant) , buffered oxide etch , selectivity , thermal oxidation , reactive ion etching , chemical engineering , composite material , metallurgy , layer (electronics) , chemistry , zirconium , organic chemistry , physics , chromatography , meteorology , engineering , catalysis
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