Open AccessConduction Properties of NitAI Ohmic Contacts to AI-implanted p-type 4H-SiC
Publication year - 2009
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.9.717
Subject(s) - ohmic contact , materials science , overlayer , electrical resistivity and conductivity , analytical chemistry (journal) , contact resistance , silicide , silicon , metallurgy , crystallography , composite material , condensed matter physics , chemistry , electrical engineering , layer (electronics) , physics , engineering , chromatography