Open AccessEnergy-band-gap Variation of InxGaN1-xThin Films with Indium Composition
Author(s) -
Ki-Cheol Ma Park
Publication year - 2009
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.8.677
Subject(s) - indium , materials science , bowing , gallium , band gap , cathodoluminescence , metalorganic vapour phase epitaxy , analytical chemistry (journal) , trimethylindium , indium gallium nitride , photoluminescence , metallurgy , optoelectronics , gallium nitride , composite material , luminescence , chemistry , epitaxy , philosophy , theology , layer (electronics) , chromatography
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