Open AccessReduction of Barrier Height between Ni-silicide and p+ Source/drain for High Performance PMOSFET
Author(s) -
Sunkyu Kong,
Yingying Zhang,
Kee-Young Park,
Shiguang Li,
Soon-Yen Jung,
Hong-Sik Shin,
GaWon Lee,
Jin-Suk Wang,
Hi-Deok Lee
Publication year - 2009
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.6.457
Subject(s) - silicide , materials science , tin , mosfet , optoelectronics , metallurgy , silicon , electrical engineering , transistor , engineering , voltage
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom