z-logo
open-access-imgOpen Access
A Study on the Characteristic of n-ZnO:In/p-Si (111) Heterostructure by Pulsed Laser Deposition
Publication year - 2009
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.5.419
Subject(s) - indium , materials science , pulsed laser deposition , doping , heterojunction , substrate (aquarium) , optoelectronics , electrical resistivity and conductivity , diode , hall effect , thin film , deposition (geology) , analytical chemistry (journal) , nanotechnology , electrical engineering , chemistry , paleontology , oceanography , engineering , chromatography , sediment , geology , biology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here