Open AccessImproved Electrical Characteristics of Symmetrical Tunneling Dielectrics Stacked with SiO2and Si3N4Layers by Annealing Processes for Non-volatile Memory Applications
Author(s) -
Minsoo Kim,
Myung-Ho Jung,
Kwan-Su Kim,
Goon-Ho Park,
Jongwan Jung,
Hong-Bay Chung,
Young-Hie Lee,
Won-Ju Cho
Publication year - 2009
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.5.386
Subject(s) - quantum tunnelling , materials science , annealing (glass) , capacitor , dielectric , optoelectronics , oxide , nanotechnology , electrical engineering , composite material , voltage , metallurgy , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom