Open AccessImproved Electrical Characteristics of Symmetrical Tunneling Dielectrics Stacked with SiO2and Si3N4Layers by Annealing Processes for Non-volatile Memory Applications
Publication year - 2009
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.5.386
Subject(s) - quantum tunnelling , materials science , annealing (glass) , capacitor , dielectric , optoelectronics , oxide , nanotechnology , electrical engineering , composite material , voltage , metallurgy , engineering