Open AccessEffects of Various Deposition Rates of Al2O3Gate Insulator on the Properties of Organic Thin Film Transistor
Author(s) -
Kyung-Min Choi,
Gun-Woo Hyung,
YoungKwan Kim,
Eou-Sik Choi,
SangJik Kwon
Publication year - 2009
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.12.1063
Subject(s) - thin film transistor , pentacene , materials science , threshold voltage , deposition (geology) , optoelectronics , aluminium , substrate (aquarium) , gate oxide , insulator (electricity) , aluminum oxide , thin film , oxide , transistor , composite material , voltage , nanotechnology , metallurgy , electrical engineering , layer (electronics) , paleontology , oceanography , sediment , geology , biology , engineering
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