Open AccessEffects of Various Deposition Rates of Al2O3Gate Insulator on the Properties of Organic Thin Film Transistor
Publication year - 2009
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.12.1063
Subject(s) - thin film transistor , pentacene , materials science , threshold voltage , deposition (geology) , optoelectronics , aluminium , substrate (aquarium) , gate oxide , insulator (electricity) , aluminum oxide , thin film , oxide , transistor , composite material , voltage , nanotechnology , metallurgy , electrical engineering , layer (electronics) , paleontology , oceanography , sediment , geology , biology , engineering