Study of Nonvolatile Memory Device with SiO2/Si3N4Stacked Tunneling Oxide
Author(s) -
Won-Ju Cho
Publication year - 2009
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.1.017
Subject(s) - materials science , non volatile memory , oxide , optoelectronics , quantum tunnelling , nanotechnology , engineering physics , metallurgy , engineering
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