z-logo
open-access-imgOpen Access
Study of Nonvolatile Memory Device with SiO2/Si3N4Stacked Tunneling Oxide
Author(s) -
Won-Ju Cho
Publication year - 2009
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2009.22.1.017
Subject(s) - materials science , non volatile memory , oxide , optoelectronics , quantum tunnelling , nanotechnology , engineering physics , metallurgy , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom