Open AccessC-V Characterization of Plasma Etch-damage Effect on (100) SOI
Author(s) -
Yeong-Deuk Jo,
Ji-Hong Kim,
DaeHyung Cho,
ByungMoo Moon,
Won-Ju Cho,
Hong-Bay Chung,
SangMo Koo
Publication year - 2008
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2008.21.8.711
Subject(s) - silicon on insulator , materials science , capacitor , etching (microfabrication) , optoelectronics , oxide , capacitance , plasma etching , reactive ion etching , silicon , mosfet , plasma , layer (electronics) , analytical chemistry (journal) , composite material , electrical engineering , voltage , transistor , electrode , chemistry , metallurgy , chromatography , physics , engineering , quantum mechanics
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