Open AccessProperties of SiOCH Thin Film Dielectric Constant by BTMSM/O2Flow Rates
Author(s) -
Jongwook Kim,
Chang-Su Hwang,
Hong-Bae Kim
Publication year - 2008
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2008.21.4.362
Subject(s) - dielectric , plasma enhanced chemical vapor deposition , materials science , analytical chemistry (journal) , annealing (glass) , thin film , volumetric flow rate , chemical vapor deposition , permittivity , composite material , chemistry , nanotechnology , optoelectronics , thermodynamics , chromatography , physics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom