Open AccessCharacteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics
Publication year - 2008
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2008.21.1.001
Subject(s) - thin film transistor , materials science , polycrystalline silicon , crystallization , amorphous silicon , amorphous solid , optoelectronics , oxide thin film transistor , annealing (glass) , excimer laser , silicon , gate dielectric , surface roughness , crystallinity , dielectric , composite material , transistor , laser , crystalline silicon , layer (electronics) , optics , chemical engineering , electrical engineering , crystallography , voltage , engineering , chemistry , physics